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MBR30H150CT, MBRF30H150CT & SB30H150CT-1
Vishay General Semiconductor
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Document Number: 88865
Revision: 18-Apr-08
2
Note:
(1) Pulse test: 300
μs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward
voltage per diode (1)
IF
= 15 A
IF
= 15 A
IF
= 30 A
IF
= 30 A
TC
= 25 °C
TC
= 125 °C
TC
= 25 °C
TC
= 125 °C
VF
0.90
0.75
0.99
0.86
V
Maximum reverse current per diode
at working peak reverse voltage (1)
TJ
= 25 °C
TJ
= 125 °C
IR
5.0
1.0
μA
mA
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance per diode RθJC
1.7 4.0 1.7 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR30H150CT-E3/45 2.06 45 50/tube Tube
ITO-220AB MBRF30H150CT-E3/45 2.20 45 50/tube Tube
TO-262AA SB30H150CT-1E3/45 1.58 45 50/tube Tube
Figure 1. Forward Derating Curve (Total)
0
5
10
15
20
25
30
35
40
25 50 75 100 125 150 175
MBRF
MBR, MBRB
A
v
erage For
w
ard C
u
rrent (A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
280
240
200
160
120
80
40
1 10010
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
TJ
= T
J
Max.
8.3 ms Single Half Sine-Wave
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